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Abstract This study reports a pulsed laser deposition-assisted synthesis of highly metallic titanium nitride (TiN) and a series of semiconducting titanium oxynitride (TiN_xO_y) compounds in thin film form with tunable plasmonic properties by carefully altering the nitrogen (N)-oxygen (O) ratio. The N/O ratio was controlled from 0.3 (highest oxygen doping of TiN) to ~ 1.0 (no oxygen doping of TiN) by growing the TiN films under nitrogen pressures of 50, 35, and 10 mTorr and high vacuum conditions of 2 × 10⁻⁶ Torr with no external gas introduced. The presence of nitrogen in the deposition chamber during the film growth affects the gas phase oxidation of TiN to TiN_xO_yby increasing the mean free path-dependent N and O inter-collisions per second by two to three orders of magnitudes. The evidence of increased oxidation of TiN to TiN_xO_ywith an increase in nitrogen deposition pressure was obtained using X-ray photoelectron spectroscopy analysis. While the TiN samples deposited in high vacuum conditions had the highest reflectance, TiN_xO_ythin films were also found to possess high reflectance at low frequency with a well-defined edge around 20,000 cm⁻¹. Furthermore, the vacuum-deposited TiN samples showed a large negative dielectric constant of -330 and the largest frequency of zero-crossing at 25,000 cm⁻¹; the TiN_xO_ysamples deposited in the presence of nitrogen ambient also showed promising plasmonic applications at the near-mid infrared range. A comparison of the dielectric constant and loss function data of this research with the literature values for noble metals seems to indicate that TiN and TiN_xO_yhave the potential to replace gold and silver in the visible and near-infrared spectral regions.